Growth of device quality 4H-SiC by high velocity epitaxy

被引:4
作者
Yakimova, R [1 ]
Syväjärvi, M [1 ]
Ciechonski, RR [1 ]
Wahab, Q [1 ]
机构
[1] Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden
来源
SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2 | 2004年 / 457-460卷
关键词
fast growth; sublimation epitaxy; 4H-SiC; device quality; schottky diode; MOS capacitor; interface state density;
D O I
10.4028/www.scientific.net/MSF.457-460.201
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Thick (>20 mum) 4H-SiC layers in doping range of low 10(15)-10(16) cm(-1) were grown by sublimation epitaxy at a growth rate of similar to50 mum/hour. Two inch 25 mum thick layers were fabricated with standard thickness deviation of 3.77%. Effect of important process parameters on the material grade has been discussed. The Schottky diodes processed on this material sustained 900V reverse voltage at a current of 1.7 x 10(-8) A, while measured on MOS capacitors the interface state density was as low as similar to6-9 x 10(10) cm(-2).
引用
收藏
页码:201 / 204
页数:4
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