Growth of device quality 4H-SiC by high velocity epitaxy

被引：4

作者：

Yakimova, R ^{[1
]}

Syväjärvi, M ^{[1
]}

Ciechonski, RR ^{[1
]}

Wahab, Q ^{[1
]}

机构：

[1] Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden

来源：

SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2 | 2004年 / 457-460卷

关键词：

fast growth; sublimation epitaxy; 4H-SiC; device quality; schottky diode; MOS capacitor; interface state density;

D O I：

10.4028/www.scientific.net/MSF.457-460.201

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thick (>20 mum) 4H-SiC layers in doping range of low 10(15)-10(16) cm(-1) were grown by sublimation epitaxy at a growth rate of similar to50 mum/hour. Two inch 25 mum thick layers were fabricated with standard thickness deviation of 3.77%. Effect of important process parameters on the material grade has been discussed. The Schottky diodes processed on this material sustained 900V reverse voltage at a current of 1.7 x 10(-8) A, while measured on MOS capacitors the interface state density was as low as similar to6-9 x 10(10) cm(-2).

引用

页码：201 / 204

页数：4

共 3 条

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