Modeling of microwave ring resonators using the finite-difference time-domain method (FDTD)

被引:0
|
作者
Semouchkina, E [1 ]
Cao, WW
Mittra, R
机构
[1] Penn State Univ, Mat Res Lab, University Pk, PA 16802 USA
[2] Penn State Univ, Dept Math, University Pk, PA 16802 USA
[3] Penn State Univ, Dept Elect Engn, University Pk, PA 16802 USA
关键词
microstrip ring; microwave resonator; finite-difference time-domain method; scattering parameters; dielectric constant measurements;
D O I
10.1002/(SICI)1098-2760(20000320)24:6<392::AID-MOP10>3.0.CO;2-J
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Scattering parameters of microstrip ring resonators (with and without slits) that are either edge or side coupled to the feedlines are simulated by the FDTD method. The strip conductors on the device can either be infinitely thin or finite in thickness. The simulations predict the occurrence of resonance peak splitting due to the simultaneous existence of magnetic and electric field coupling mechanisms. Excellent agreement was obtained between the simulation results and the measured data for a ring resonator. We have also shown that it si possible to use finite-difference time-domain simulations to determine the dielectric constant of substrate materials. (C) 2000 John Wiley & Sons, Inc.
引用
收藏
页码:392 / 396
页数:5
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