A Diamond: H/MoO3 MOSFET

被引：36
作者：
Vardi, Alon [1 ]
Tordjman, Moshe [2 ]
del Alamo, Jesus A. [1 ]
Kalish, Rafi [2 ]
机构：
[1] MIT, Microsyst Technol Lab, Cambridge, MA 02139 USA
[2] Technion Israel Inst Technol, Russell Berrie Nanotechnol Inst, IL-32000 Haifa, Israel
来源：
IEEE ELECTRON DEVICE LETTERS | 2014年 / 35卷 / 12期
关键词：
Diamond:H; MoO3; surface transfer doping; MOSFET; SURFACE CONDUCTIVITY; VAPOR;
D O I：
10.1109/LED.2014.2364832
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A p-type MOSFET based on a heterointerface of hydrogenated-diamond transfer doped with MoO3 (Diamond: H/MoO3) is demonstrated for the first time. This is an important new heterostructure system due to its potentially improved temperature stability as compared with the better established Diamond: H/H2O system. MOSFETs using HfO2 as gate insulator show excellent output characteristics and gate control over the 2-D hole gas at the Diamond: H/MoO3 interface. In 3.5-mu m gate length devices, we obtain a maximum drain-current ON-OFF ratio of three orders of magnitude and a maximum transconductance of 2.5 mu S/mu m.
引用
收藏
页码：1320 / 1322
页数：3
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