A Diamond: H/MoO3 MOSFET

被引：36

作者：

Vardi, Alon ^{[1
]}

Tordjman, Moshe ^{[2
]}

del Alamo, Jesus A. ^{[1
]}

Kalish, Rafi ^{[2
]}

机构：

[1] MIT, Microsyst Technol Lab, Cambridge, MA 02139 USA

[2] Technion Israel Inst Technol, Russell Berrie Nanotechnol Inst, IL-32000 Haifa, Israel

来源：

IEEE ELECTRON DEVICE LETTERS | 2014年 / 35卷 / 12期

关键词：

Diamond:H; MoO3; surface transfer doping; MOSFET; SURFACE CONDUCTIVITY; VAPOR;

D O I：

10.1109/LED.2014.2364832

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A p-type MOSFET based on a heterointerface of hydrogenated-diamond transfer doped with MoO3 (Diamond: H/MoO3) is demonstrated for the first time. This is an important new heterostructure system due to its potentially improved temperature stability as compared with the better established Diamond: H/H2O system. MOSFETs using HfO2 as gate insulator show excellent output characteristics and gate control over the 2-D hole gas at the Diamond: H/MoO3 interface. In 3.5-mu m gate length devices, we obtain a maximum drain-current ON-OFF ratio of three orders of magnitude and a maximum transconductance of 2.5 mu S/mu m.

引用

页码：1320 / 1322

页数：3

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