Electrorefractive Effect in GaInNAs/GaAs Five-Layer Asymmetric Coupled Quantum Well

被引：2

作者：

Fukuoka, Masayasu ^{[1
]}

Toya, Takahiro ^{[1
]}

Sawai, Yutaka ^{[1
]}

Arakawa, Taro ^{[1
]}

Tada, Kunio ^{[2
]}

机构：

[1] Yokohama Natl Univ, Grad Sch Engn, Hodogaya Ku, Yokohama, Kanagawa 2408501, Japan

[2] Kanazawa Inst Technol, Grad Sch Engn, Minato Ku, Tokyo 1050002, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2009年 / 48卷 / 04期

关键词：

PERFORMANCE; MODULATOR;

D O I：

10.1143/JJAP.48.04C154

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A GaInNAs/GaAs five-layer asymmetric coupled quantum well (FACOW) in the 1.3-mu m-wave length region was proposed and theoretically analyzed. The valence band structures of the FACQW were analyzed using the Luttinger-Kohn Hamiltonian based on the k . p perturbation theory and a nonvariational method. The GaInNAs/GaAs FACQW can exhibit a unique behavior of the quantum confined Stark effect, leading to a large electrorefractive index change (Delta n/Delta F = 3.9 x 10(-4) cm/kV) at a small electric field in a wide-transparency-wavelength region far from the absorption edge. This characteristic is comparable to InGaAs/InAlAs and InGaAsP FACOWs operated in the 1.55-mu m-wavelength region. The GaInNAs/GaAs FACQW is expected to realize ultrawide-band, ultrafast optical modulators and switches and other functional devices based on the phase shift in the 1.3-mu m-wavelength region. The driving voltage of a 1 mm-phase modulator is estimated to be 0.4V. (C) 2009 The Japan Society of Applied Physics

引用

页数：3

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