Photoluminescence of freestanding single- and few-layer MoS2

被引：247

作者：

Scheuschner, Nils ^{[1
]}

Ochedowski, Oliver ^{[2
,3
]}

Kaulitz, Anne-Marie ^{[1
]}

Gillen, Roland ^{[1
]}

Schleberger, Marika ^{[2
,3
]}

Maultzsch, Janina ^{[1
]}

机构：

[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

[2] Univ Duisburg Essen, Fak Phys, D-47048 Duisburg, Germany

[3] Univ Duisburg Essen, CeNIDE, D-47048 Duisburg, Germany

来源：

PHYSICAL REVIEW B | 2014年 / 89卷 / 12期

基金：

欧洲研究理事会;

关键词：

MONOLAYER; RAMAN; SPECTRUM; STRAIN;

D O I：

10.1103/PhysRevB.89.125406

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a photoluminescence study of freestanding and Si/SiO2 supported single-and few-layer MoS2. The single-layer exciton peak (A) is only observed in freestanding MoS2. The photoluminescence of supported single-layer MoS2 instead originates from the A-(trion) peak as the MoS2 is n-type doped from the substrate. In bilayer MoS2, the van der Waals interaction with the substrate decreases the indirect band gap energy by up to similar to 80 meV. Furthermore, the photoluminescence spectra of suspended MoS2 can be influenced by interference effects.

引用

页数：6

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