Spatial distribution of polarization and space charge in barium strontium titanate ceramics

被引:9
作者
Farhat, N. [1 ]
Hole, S.
Ditchi, T.
Lewiner, J.
Button, T. W.
Su, B.
机构
[1] Fac Sci Monastir, Unite Phys Solides, Monastir 5000, Tunisia
[2] Univ Paris 06, Lab Instruments & Syst Ile de France, F-75005 Paris, France
[3] Ecole Super Phys & Chim Ind Ville Paris, Lab Elect Gen, F-75005 Paris, France
[4] Univ Birmingham, IRC Mat Proc, Birmingham B15 2TT, W Midlands, England
关键词
D O I
10.1063/1.2336487
中图分类号
O59 [应用物理学];
学科分类号
摘要
Ferroelectric films of BaSrTiO3 (BST) are identified as a potential alternative to silicon dioxide in the silicon-based microelectronics industry owing to their very high dielectric constant. In this paper the distribution of space charge and polarization in BST ceramics is studied at room temperature with the laser induced pressure pulse method. Under voltage, dipoles orient rapidly but are subjected to the material nonuniformities. At longer time the ceramic becomes uniformly poled, indicating a transformation of the material. The remnant polarization remains uniform and stable for at least two days once the sample shorted. Long stress cycles and annealing have shown similar effects on the electrical behavior owing to similar microregion rearrangements. (c) 2006 American Institute of Physics.
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页数:5
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共 19 条
[1]   Optimization of the tunability of barium strontium titanate films via epitaxial stresses [J].
Ban, ZG ;
Alpay, SP .
JOURNAL OF APPLIED PHYSICS, 2003, 93 (01) :504-511
[2]   Effects of annealing conditions on charge loss mechanisms in MOCVD Ba0.7Sr0.3TiO3 thin film capacitors [J].
Baniecki, JD ;
Laibowitz, RB ;
Shaw, TM ;
Saenger, KL ;
Duncombe, PR ;
Cabral, C ;
Kotecki, DE ;
Shen, H ;
Lian, J ;
Ma, QY .
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 1999, 19 (6-7) :1457-1461
[3]   Dielectric relaxation of Ba0.7Sr0.3TiO3 thin films from 1 mHz to 20 GHz [J].
Baniecki, JD ;
Laibowitz, RB ;
Shaw, TM ;
Duncombe, PR ;
Neumayer, DA ;
Kotecki, DE ;
Shen, H ;
Ma, QY .
APPLIED PHYSICS LETTERS, 1998, 72 (04) :498-500
[4]   DIFFUSE PHASE-TRANSITIONS AND FERROELECTRIC-PARAELECTRIC DIAGRAM FOR THE BATIO3-SRTIO3 SYSTEM [J].
BARB, D ;
BARBULESCU, E ;
BARBULESCU, A .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 74 (01) :79-83
[5]   DIFFUSED PHASE-TRANSITIONS IN BAXSR1-XTIO3 SINGLE-CRYSTALS [J].
BENGUIGUI, L ;
BETHE, K .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) :2787-2791
[6]   Leakage currents in Ba0.7Sr0.3TiO3 thin films for ultrahigh-density dynamic random access memories [J].
Dietz, GW ;
Schumacher, M ;
Waser, R ;
Streiffer, SK ;
Basceri, C ;
Kingon, AI .
JOURNAL OF APPLIED PHYSICS, 1997, 82 (05) :2359-2364
[7]   Non-destructive methods for space charge distribution measurements:: What are the differences? [J].
Holé, S ;
Ditchi, T .
IEEE TRANSACTIONS ON DIELECTRICS AND ELECTRICAL INSULATION, 2003, 10 (04) :670-677
[8]   Influence of divergent electric fields on space-charge distribution measurements by elastic methods [J].
Holé, S ;
Ditchi, T ;
Lewiner, J .
PHYSICAL REVIEW B, 2000, 61 (20) :13528-13539
[9]   DIELECTRIC-RELAXATION OF (BA,SR)TIO3 THIN-FILMS [J].
HORIKAWA, T ;
MAKITA, T ;
KUROIWA, T ;
MIKAMI, N .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (9B) :5478-5482
[10]   Alternative dielectrics to silicon dioxide for memory and logic devices [J].
Kingon, AI ;
Maria, JP ;
Streiffer, SK .
NATURE, 2000, 406 (6799) :1032-1038