Trends in development of modem silicon nanoelectronics

被引：0

作者：

Neizvestny, Igor G. ^{[1
]}

机构：

[1] Russian Acad Sci, Siberian Branch, Inst Semicond Phys, Moscow 117901, Russia

来源：

EDM 2006: 7th Annual International Workshop and Tutorials on Electron Devices and Materials, Proceedings | 2006年

关键词：

silicon; germanium; technology; nanoelectronics;

D O I：

暂无

中图分类号：

O42 [声学];

学科分类号：

070206 ; 082403 ;

摘要：

In this tutorial the main trends in development of silicon nanoelectronics are presented and analyzed. All presented technologies are illustrated.

引用

页码：3 / 5

页数：3