Development of Integrated HTS SQUIDs With a Multilayer Structure and Ramp-Edge Josephson Junctions

被引：28

作者：

Wakana, Hironori ^{[1
]}

Adachi, S. ^{[1
]}

Hata, Kiyoshi ^{[1
]}

Hato, Tsunehiro ^{[1
]}

Tarutani, Yoshinobu ^{[1
]}

Tanabe, Keiichi ^{[1
]}

机构：

[1] ISTEC, Superconduct Res Lab, Tokyo 1350062, Japan

来源：

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY | 2009年 / 19卷 / 03期

关键词：

High-temperature superconductors; SQUIDs; superconducting device fabrication; superconducting device noise; QUANTUM INTERFERENCE DEVICE; NOISE PROPERTIES; MAGNETOMETER; SYSTEM; FABRICATION; MOBILE;

D O I：

10.1109/TASC.2009.2019077

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have fabricated high-temperature superconductor (HTS) dc superconducting quantum interference devices (SQUIDs) with a multilayer structure and ramp-edge Josephson junctions. For stable operation at 77 K, SmBa(2)Cu(3)Oy (SmBCO) and La-0.1 - Er(0.95)Ba(1.95)Cu(3)Oy (La-ErBCO) films with a T-c above 90 K were employed as materials for the base-electrode and counter-electrode layers, respectively. Junctions were fabricated by employing a Cu-poor La-ErBCO layer as a precursor of the barrier. The fabricated parallel gradiometers with a baseline of 1-3 mm exhibited the field-induced modulation voltage of 20-50 mu V at 77 K, and a clear modulation up to 86.8 K. Noise measurements at 77 K revealed a white flux noise of 4.5-10 mu Phi(0)/Hz(1/2) at 1 kHz. The magnetometer with an integrated 20-turn flux transformer and the effective area of about 1.8 mm(2) exhibited a field noise of 25 fT/Hz(1/2) or less at 1 kHz.

引用

页码：782 / 785

页数：4

共 22 条

[1] Preparation of multilayer films for integrated high-Tc SQUIDs with ramp-edge Josephson junctions [J].