Monte Carlo and Ab-initio calculation of TM (Ti, V, Cr, Mn, Fe, Co, Ni) doped MgH2 hydride: GGA and SIC approximation

被引:13
|
作者
Salmani, E. [1 ]
Laghrissi, A. [1 ]
Lamouri, R. [1 ]
Benchafia, E. [3 ]
Ez-Zahraouy, H. [1 ]
Benyoussef, A. [2 ]
机构
[1] Mohammed V Univ Rabat, LMPHE URAC12, Fac Sci, Rabat, Morocco
[2] Inst Nanomaterials & Nanotechnol, MAScIR, Rabat, Morocco
[3] New Jersey Inst Technol, Dept Mat Sci & Engn, Newark, NJ 07102 USA
关键词
Ab-initio calculation; KKR-CPA; Diluted magnetic semiconductor; MgH2 and Monte Carlo simulation; FERROMAGNETISM;
D O I
10.1016/j.jmmm.2016.10.022
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
MgH2: TM (TM: V, Cr, Mn, Fe, Co, Ni) based dilute magnetic semiconductors (DMS) are investigated using first principle calculations. Our results show that the ferromagnetic state is stable when TM introduces magnetic moments as well as intrinsic carriers in TM: Co, V, Cr, Ti; Mg0.95TM0.05H2. Some of the DMS Ferro magnets under study exhibit a half-metallic behavior, which make them suitable for spintronic applications. The double exchange is shown to be the underlying mechanism responsible for the magnetism of such materials. The exchange interactions obtained from first principle calculations and used in a classical Ising model by a Monte Carlo approach resulted in ferromagnetic states with Curie temperatures within the ambient conditions.
引用
收藏
页码:53 / 63
页数:11
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