Numerical study of transport phenomena in the THM growth of compound semiconductor crystal

A numerical simulation study was carried out for the crystal growth of GaSb from a Ga-solution by the traveling heater method (THM). The effects of crucible temperature, crucible rotation and crucible material on the crystal/solution interface shape were investigated. It was found that the interface curvature increases with increasing crucible temperature. In such a case, the use of crucible rotation was very beneficial in suppressing the natural convection in the melt, and in obtaining an interface with smaller curvature. When the crucible temperature was lower (while keeping the same temperature gradient), the interface shape was slightly convex towards the crystal. The crucible rotation did not affect the interface shape significantly. The use of a pBN crucible required a higher growth temperature compared with a system of SiO2 or carbon crucible. (C) 2002 Elsevier Science B.V. All rights reserved.