Insulator-to-Metallic Spin-Filtering in 2D-Magnetic Tunnel Junctions Based on Hexagonal Boron Nitride

被引：84

作者：

Piquemal-Banci, Maelis ^{[1
]}

Galceran, Regina ^{[1
]}

Godel, Florian ^{[1
]}

Caneva, Sabina ^{[2
]}

Martin, Marie-Blandine ^{[2
]}

Weatherup, Robert S. ^{[2
]}

Kidambi, Piran R. ^{[2
]}

Bouzehouane, Karim ^{[1
]}

Xavier, Stephane ^{[3
]}

Anane, Abdelmadjid ^{[1
]}

Petroff, Frederic ^{[1
]}

Fert, Albert ^{[1
]}

Dubois, Simon Mutien-Marie ^{[4
]}

Charlier, Jean-Christophe ^{[4
]}

Robertson, John ^{[2
]}

Hofmann, Stephan ^{[2
]}

Dlubak, Bruno ^{[1
]}

Seneor, Pierre ^{[1
]}

机构：

[1] Univ Paris Saclay, Univ Paris Sud, Thales, Unite Mixte Phys,CNRS, F-91767 Palaiseau, France

[2] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England

[3] Thales Res & Technol, 1 Ave Augustin Fresnel, F-91767 Palaiseau, France

[4] Catholic Univ Louvain, Inst Condensed Matter & Nanosci IMCN, B-1348 Louvain La Neuve, Belgium

来源：

ACS NANO | 2018年 / 12卷 / 05期

基金：

英国工程与自然科学研究理事会; 欧盟地平线“2020”;

关键词：

hexagonal boron nitride; 2D materials; chemical vapor deposition; spintronics; GRAPHENE; MAGNETORESISTANCE; TEMPERATURE; INTERFACE; NI(111); FE;

D O I：

10.1021/acsnano.8b01354

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report on the integration of atomically thin 2D insulating hexagonal boron nitride (h-BN) tunnel barriers into magnetic tunnel junctions (2D-MTJs) by fabricating two illustrative systems (Co/h-BN/Co and Co/h-BN/Fe) and by discussing h-BN potential for metallic spin filtering. The h-BN is directly grown by chemical vapor deposition on prepatterned Co and Fe stripes. Spin-transport measurements reveal tunnel magneto-resistances in these h-BN-based MTJs as high as 12% for Co/h-BN/h-BN/Co and 50% for Co/h-BN/Fe. We analyze the spin polarizations of hBN/Co and h-BN/Fe interfaces extracted from experimental spin signals in light of spin filtering at hybrid chemisorbed/physisorbed h-BN, with support of ab initio calculations. These experiments illustrate the strong potential of h-BN for MTJs and are expected to ignite further investigations of 2D materials for large signal spin devices.

引用

页码：4712 / 4718

页数：7

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