High-NA EUV lithography optics becomes reality

被引：29

作者：

Ischmeier, Lars ^{[1
,2
]}

Graupner, Paul ^{[1
,2
]}

Kurz, Peter ^{[1
,2
]}

Kaiser, Winfried ^{[1
,2
]}

Van Schoot, Jan ^{[3
]}

Mallmann, Jorg ^{[3
]}

de Pee, Joost ^{[3
]}

Stoeldra, Judon ^{[3
]}

机构：

[1] Carl Zeiss SMT GmbH, Rudolf Eber Str 2, D-73447 Oberkochen, Germany

[2] ZEISS Grp, Rudolf Eber Str 2, D-73447 Oberkochen, Germany

[3] ASML Netherlands BV, De Run 6501, NL-5504 DR Veldhoven, Netherlands

来源：

EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY XI | 2020年 / 11323卷

基金：

欧盟地平线“2020”;

关键词：

EUV; Optics; Imaging;

D O I：

10.1117/12.2543308

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

For each lithography scanner the optics is a key component. While the NXE:3400 with ZEISS Starlith (R) 3400 optics at Numerical Aperture of 0.33 is entering high-volume manufacturing in customer factories, we are developing high NA optics with a Numerical Aperture of 0.55. This optics consists of a highly flexible illumination system and a projection optics enabling single-exposure sub 8nm half-pitch resolution. In this paper, we give an overview of the progress of ZEISS High-NA EUV program where production of first mirrors and frames has already been started.

引用

页数：11

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