Advanced quantum dot configurations

被引：157

作者：

Kiravittaya, Suwit ^{[1
]}

Rastelli, Armando ^{[2
]}

Schmidt, Oliver G. ^{[2
]}

机构：

[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

[2] IFW Dresden, Inst Integrat Nanosci, D-01069 Dresden, Germany

来源：

REPORTS ON PROGRESS IN PHYSICS | 2009年 / 72卷 / 04期

关键词：

SELF-ASSEMBLED NANOHOLES; INAS ISLANDS; SURFACE-MORPHOLOGY; OPTICAL-PROPERTIES; SHAPE TRANSITION; FINE-STRUCTURE; GE/SI ISLANDS; GROWTH; SINGLE; MOLECULES;

D O I：

10.1088/0034-4885/72/4/046502

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We present an overview on approaches currently employed to fabricate advanced quantum dot configurations by epitaxial growth. Widely investigated self-assembled quantum dots, i.e. In(Ga)As/GaAs and (Si)Ge/Si, are first introduced. Different quantum dot structures can be derived from In(Ga) As quantum dots by combining them with in situ etching, by layer stacking or by using them as stressors. Other fabrication methods include droplet epitaxy and multilayer deposition on hole patterned substrates. The combination of bottom-up and top-down methods results in absolute position control of self-assembled quantum dots. We review these 'seeded quantum dot crystals' in detail. Finally, we discuss a promising approach to realize quantum dot crystals with controlled spatial and optical properties.

引用

页数：34

共 155 条

[31] Fine structure splitting in the optical spectra of single GaAs quantum dots [J].

Gammon, D ;

Snow, ES ;

Shanabrook, BV ;

Katzer, DS ;

Park, D .

PHYSICAL REVIEW LETTERS, 1996, 76 (16) :3005-3008

[32]

Garcia JM, 1998, APPL PHYS LETT, V72, P3172, DOI 10.1063/1.121583

[33] Intermixing and shape changes during the formation of InAs self-assembled quantum dots [J].

García, JM ;

MedeirosRibeiro, G ;

Schmidt, K ;

Ngo, T ;

Feng, JL ;

Lorke, A ;

Kotthaus, J ;

Petroff, PM .

APPLIED PHYSICS LETTERS, 1997, 71 (14) :2014-2016

[34] Three-dimensional Si/Ge quantum dot crystals [J].

Gruetzmacher, Detlev ;

Fromherz, Thomas ;

Dais, Christian ;

Stangl, Julian ;

Mueller, Elisabeth ;

Ekinci, Yasin ;

Solak, Harun H. ;

Sigg, Hans ;

Lechner, Rainer T. ;

Wintersberger, Eugen ;

Birner, Stefan ;

Holy, Vaclav ;

Bauer, Guenther .

NANO LETTERS, 2007, 7 (10) :3150-3156

[35] Theory of random population for quantum dots [J].

Grundmann, M ;

Bimberg, D .

PHYSICAL REVIEW B, 1997, 55 (15) :9740-9745

[36] Growth of nanowire superlattice structures for nanoscale photonics and electronics [J].

Gudiksen, MS ;

Lauhon, LJ ;

Wang, J ;

Smith, DC ;

Lieber, CM .

NATURE, 2002, 415 (6872) :617-620

[37] Biexcitons in coupled quantum dots as a source of entangled photons [J].

Gywat, O ;

Burkard, G ;

Loss, D .

PHYSICAL REVIEW B, 2002, 65 (20) :2053291-2053295

[38] Self-limiting growth of quantum dot heterostructures on nonplanar {111}B substrates [J].

Hartmann, A ;

Loubies, L ;

Reinhardt, F ;

Kapon, E .

APPLIED PHYSICS LETTERS, 1997, 71 (10) :1314-1316

[39] GROWTH OF SIGE QUANTUM WIRES AND DOTS ON PATTERNED SI SUBSTRATES [J].

HARTMANN, A ;

VESCAN, L ;

DIEKER, C ;

LUTH, H .

JOURNAL OF APPLIED PHYSICS, 1995, 77 (05) :1959-1963

[40] Growth, structural, and optical properties of self-assembled (In,Ga)As quantum posts on GaAs [J].

He, J. ;

Krenner, H. J. ;

Pryor, C. ;

Zhang, J. P. ;

Wu, Y. ;

Allen, D. G. ;

Morris, C. M. ;

Sherwin, M. S. ;

Petroff, P. M. .

NANO LETTERS, 2007, 7 (03) :802-806

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