Advanced quantum dot configurations

被引：157

作者：

Kiravittaya, Suwit ^{[1
]}

Rastelli, Armando ^{[2
]}

Schmidt, Oliver G. ^{[2
]}

机构：

[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

[2] IFW Dresden, Inst Integrat Nanosci, D-01069 Dresden, Germany

来源：

REPORTS ON PROGRESS IN PHYSICS | 2009年 / 72卷 / 04期

关键词：

SELF-ASSEMBLED NANOHOLES; INAS ISLANDS; SURFACE-MORPHOLOGY; OPTICAL-PROPERTIES; SHAPE TRANSITION; FINE-STRUCTURE; GE/SI ISLANDS; GROWTH; SINGLE; MOLECULES;

D O I：

10.1088/0034-4885/72/4/046502

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We present an overview on approaches currently employed to fabricate advanced quantum dot configurations by epitaxial growth. Widely investigated self-assembled quantum dots, i.e. In(Ga)As/GaAs and (Si)Ge/Si, are first introduced. Different quantum dot structures can be derived from In(Ga) As quantum dots by combining them with in situ etching, by layer stacking or by using them as stressors. Other fabrication methods include droplet epitaxy and multilayer deposition on hole patterned substrates. The combination of bottom-up and top-down methods results in absolute position control of self-assembled quantum dots. We review these 'seeded quantum dot crystals' in detail. Finally, we discuss a promising approach to realize quantum dot crystals with controlled spatial and optical properties.

引用

页数：34

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