Buffer layer engineering on graphene via various oxidation methods for atomic layer deposition

被引：21
|
作者：
Takahashi, Nobuaki [1 ]
Nagashio, Kosuke [1 ,2 ]
机构：
[1] Univ Tokyo, Dept Mat Engn, Bunkyo Ku, Tokyo 1138656, Japan
[2] Japan Sci & Technol Agcy JST, PRESTO, Bunkyo Ku, Tokyo 1138656, Japan
来源：
APPLIED PHYSICS EXPRESS | 2016年 / 9卷 / 12期
关键词：
FIELD-EFFECT TRANSISTORS; EPITAXIAL GRAPHENE; BILAYER GRAPHENE; BORON-NITRIDE; BAND-GAP; PERFORMANCE; DIELECTRICS; OXIDE; TRANSPORT;
D O I：
10.7567/APEX.9.125101
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The integration of a high-k oxide on graphene using atomic layer deposition requires an electrically reliable buffer layer. In this study, Y was selected as the buffer layer due to its highest oxidation ability among the rare-earth elements, and various oxidation methods (atmospheric, and high-pressure O-2 and ozone annealing) were applied to the Y metal buffer layer. By optimizing the oxidation conditions of the top-gate insulator, we successfully improved the capacitance of the top gate Y2O3 insulator and demonstrated a large Ion/Ioff ratio for bilayer graphene under an external electric field. (C) 2016 The Japan Society of Applied Physics
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页数：4
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