Buffer layer engineering on graphene via various oxidation methods for atomic layer deposition

被引：21

作者：

Takahashi, Nobuaki ^{[1
]}

Nagashio, Kosuke ^{[1
,2
]}

机构：

[1] Univ Tokyo, Dept Mat Engn, Bunkyo Ku, Tokyo 1138656, Japan

[2] Japan Sci & Technol Agcy JST, PRESTO, Bunkyo Ku, Tokyo 1138656, Japan

来源：

APPLIED PHYSICS EXPRESS | 2016年 / 9卷 / 12期

关键词：

FIELD-EFFECT TRANSISTORS; EPITAXIAL GRAPHENE; BILAYER GRAPHENE; BORON-NITRIDE; BAND-GAP; PERFORMANCE; DIELECTRICS; OXIDE; TRANSPORT;

D O I：

10.7567/APEX.9.125101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The integration of a high-k oxide on graphene using atomic layer deposition requires an electrically reliable buffer layer. In this study, Y was selected as the buffer layer due to its highest oxidation ability among the rare-earth elements, and various oxidation methods (atmospheric, and high-pressure O-2 and ozone annealing) were applied to the Y metal buffer layer. By optimizing the oxidation conditions of the top-gate insulator, we successfully improved the capacitance of the top gate Y2O3 insulator and demonstrated a large Ion/Ioff ratio for bilayer graphene under an external electric field. (C) 2016 The Japan Society of Applied Physics

引用

页数：4

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