Characterisation and integration feasibility of JS']JSR's low-k dielectric LKD-5109

被引：18

作者：

Das, A

Kokubo, T

Furukawa, Y

Struyf, H

Vos, I

Sijmus, B

Iacopi, F

Van Aelst, J

Le, QT

Carbonell, L

Brongersma, S

Maenhoudt, M

Tokei, Z

Vervoort, I

Sleeckx, E

Stucchi, M

Schaekers, M

Boullart, W

Rosseel, E

Van Hove, M

Vanhaelemeersch, S

Shiota, A

Maex, K

机构：

[1] IMEC, B-3001 Louvain, Belgium

[2] Philips Res Leuven, B-3001 Louvain, Belgium

[3] Katholieke Univ Leuven, EE Dept, B-3001 Louvain, Belgium

[4] JSR Corp, Tsukuba, Ibaraki 3050841, Japan

来源：

MICROELECTRONIC ENGINEERING | 2002年 / 64卷 / 1-4期

关键词：

single damascene; MSQ-based materials; interlayer dielectrics; LKD-5109;

D O I：

10.1016/S0167-9317(02)00768-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Increasing the circuit density is driving the need for lower permittivity interlayer dielectrics (ILD) to reduce the capacitance between long parallel lines. JSR's LKD-5109, an MSQ-based material, is one of such low-k materials for the 65-nm node. The feasibility of integrating LKD-5109 in a single inlaid structure has been investigated. Thermal stability, chemical compatibility to stripping agents and CMP slurries are verified. A single damascene structure incorporating a dual CVD hard mask has been attempted and electrical results have been evaluated. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：25 / 33

页数：9

共 7 条

[1] Determination of pore size distribution in thin films by ellipsometric porosimetry [J].