Correlation of crystalline defects with photoluminescence of InGaN layers

被引：30

作者：

Faleev, Nikolai ^{[1
]}

Jampana, Balakrishnam ^{[1
]}

Jani, Omkar ^{[2
]}

Yu, Hongbo ^{[2
]}

Opila, Robert ^{[1
]}

Ferguson, Ian ^{[2
]}

Honsberg, Christiana ^{[3
]}

机构：

[1] Univ Delaware, Newark, DE 19716 USA

[2] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

[3] Arizona State Univ, Fulton Sch Elect Engn, Tempe, AZ 85287 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 05期

关键词：

dislocation density; dislocation loops; gallium compounds; III-V semiconductors; indium compounds; photoconductivity; photoluminescence; semiconductor thin films; spectral line intensity; X-ray diffraction; PHASE-SEPARATION; FILMS; GAN;

D O I：

10.1063/1.3202409

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report structural studies of InGaN epilayers of various thicknesses by x-ray diffraction, showing a strong dependence of the type and spatial distribution of extended crystalline defects on layer thickness. The photoluminescence intensity for the samples was observed to increase with thickness up to 200 nm and decrease for higher thicknesses, a result attributed to creation of dislocation loops within the epilayer. Correlation of physical properties with crystalline perfection open the way for optimized designs of InGaN solar cells, with controlled types and dislocation densities in the InGaN epilayers, a key requirement for realizing high photocurrent generation in InGaN.

引用

页数：3

共 10 条

[1]

[Anonymous], SINGLE CRYSTAL FILMS

[2] Phase separation in InGaN grown by metalorganic chemical vapor deposition [J].