Electric Field Control of Interface Related Spin Splitting in Step Quantum Wells

被引：1

作者：

Hao Ya-Fei ^{[1
]}

Chen Yong-Hai ^{[1
]}

Hao Guo-Dong ^{[1
]}

Wang Zhan-Guo ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 2009年 / 26卷 / 07期

基金：

中国国家自然科学基金;

关键词：

CONDUCTION SUBBANDS; INVERSION ASYMMETRY; HETEROSTRUCTURES; RASHBA; LAYERS; INAS;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Spin splitting of the AlyGa1-yAs/GaAs/AlxGa1-xAs/AlyGa1-yAs (x not equal y) step quantum wells (QWs) has been theoretically investigated with a model that includes both the interface and the external electric field contribution. The overall spin splitting is mainly determined by the interface contribution, which can be well manipulated by the external electric field. In the absence of the electric field, the Rashba effect exists due to the internal structure inversion asymmetry (SIA). The electric field can strengthen or suppress the internal SIA, resulting in an increase or decrease of the spin splitting. The step QW, which results in large spin splitting, has advantages in applications to spintronic devices compared with symmetrical and asymmetrical QWs. Due to the special structure design, the spin splitting does not change with the external electric field.

引用

页数：4

共 20 条

[1] OSCILLATORY EFFECTS AND THE MAGNETIC-SUSCEPTIBILITY OF CARRIERS IN INVERSION-LAYERS [J].

BYCHKOV, YA ;

RASHBA, EI .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (33) :6039-6045

[2] ELECTRONIC ANALOG OF THE ELECTROOPTIC MODULATOR [J].

DATTA, S ;

DAS, B .

APPLIED PHYSICS LETTERS, 1990, 56 (07) :665-667

[3] Experimental and theoretical approach to spin splitting in modulation-doped InxGa1-xAs/InP quantum wells for B->0 [J].

Engels, G ;

Lange, J ;

Schäpers, T ;

Lüth, H .

PHYSICAL REVIEW B, 1997, 55 (04) :R1958-R1961

[4] Large Rashba splitting in InAs quantum wells due to electron wave function penetration into the barrier layers [J].

Grundler, D .

PHYSICAL REVIEW LETTERS, 2000, 84 (26) :6074-6077

[5] Spin splitting of conduction subbands in Al0.3Ga0.7As/GaAs/AlxGa1-x As/Al0.3Ga0.7As step quantum wells [J].

Hao, Y. F. ;

Chen, Y. H. ;

Liu, Y. ;

Wang, Z. G. .

EPL, 2009, 85 (03)

[6] Spin-orbit-split subbands in IV-VI asymmetric quantum wells [J].

Hasegawa, MM ;

Silva, EADE .

PHYSICAL REVIEW B, 2003, 68 (20)

[7] SPIN ORIENTATION AT SEMICONDUCTOR HETEROINTERFACES [J].

JUSSERAND, B ;

RICHARDS, D ;

ALLAN, G ;

PRIESTER, C ;

ETIENNE, B .

PHYSICAL REVIEW B, 1995, 51 (07) :4707-4710

[8] Rashba spin splitting in inversion layers on p-type bulk InAs [J].

Matsuyama, T ;

Kürsten, R ;

Meissner, C ;

Merkt, U .

PHYSICAL REVIEW B, 2000, 61 (23) :15588-15591

[9] Measurement of Rashba and Dresselhaus spin-orbit magnetic fields [J].

Meier, Lorenz ;

Salis, Gian ;

Shorubalko, Ivan ;

Gini, Emilio ;

Schoen, Silke ;

Ensslin, Klaus .

NATURE PHYSICS, 2007, 3 (09) :650-654

[10]

Nitta J, 1997, PHYS REV LETT, V78, P1335, DOI 10.1103/PhysRevLett.78.1335

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