Thin-film preparation of the Li2S-GeS2-Ga2S3 glass system by sputtering

被引：23
作者：
Yamashita, M
Yamanaka, H
Wakabayashi, H
机构：
[1] Osaka National Research Institute, AIST, Ikeda 563
来源：
SOLID STATE IONICS | 1996年 / 89卷 / 3-4期
关键词：
lithium ion; sulfide glass; sputtering; thin film;
D O I：
10.1016/0167-2738(96)00342-6
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Thin films of the Li2S-GeS2-Ga2S3 glass system were prepared by RF sputtering. In the films, Ge contents became higher than in targets and oxygen contents were lower, using careful procedures. The conductivity of the film showed a comparable value to a bulk glass with similar composition.
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页码：299 / 304
页数：6
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