A Monte Carlo Study of Hg0.7Cd0.3Te e-APD

被引：30

作者：

Derelle, Sophie ^{[1
]}

Bernhardt, Sylvie

Haider, Riad

Primot, Jerome

Deschamps, Joel

Rothman, Johan ^{[2
]}

机构：

[1] French Aerosp Lab ONERA, Theoret & Appl Opt Dept, F-91761 Palaiseau, France

[2] CEA Leti Minatec, F-38054 Grenoble, France

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2009年 / 56卷 / 04期

关键词：

Alloy scattering; dead space; electron-initiated avalanche photodiode (e-APD); HgCdTe; impact ionization; infrared; low excess noise factor; Monte Carlo (MC) simulation; multiplication gain; polar optical phonon (POP) scattering; ELECTRON-DRIFT VELOCITY; HIGH-FIELD TRANSPORT; EXCESS NOISE FACTOR; IMPACT IONIZATION; AVALANCHE PHOTODIODES; MULTIPLICATION NOISE; ALLOY SCATTERING; BAND-STRUCTURE; DEAD SPACE; SIMULATION;

D O I：

10.1109/TED.2009.2012526

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A simple Monte Carlo model is developed for understanding the multiplication process in HgCdTe infrared avalanche photodiodes and the impact of physical and technological parameters. A good agreement is achieved between simulations and experimental measurements of gain and excess noise factor. In both cases, an exponential gain and extremely low noise-F similar to 1 for multiplication gains up to 1000-were observed on 5.1-mu m cutoff devices at 77 K, indicative of a single carrier impact ionization. A comparison study is presented to explain the effect of different combinations of scattering processes on the avalanche phenomenon in HgCdTe.

引用

页码：569 / 577

页数：9

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