Photosensitive Schottky-type heterojunctions prepared by the drawing of graphite films

被引：22
作者：
Brus, V. V. [1 ]
Maryanchuk, P. D. [1 ]
机构：
[1] Chernivtsi Natl Univ, Dept Elect & Energy Engn, UA-58012 Chernovtsy, Ukraine
来源：
APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 17期
关键词：
GRAPHENE; TRANSPARENT; ELECTRODES; SILICON;
D O I：
10.1063/1.4872467
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Graphite/n-CdTe Schottky-type heterojunctions were prepared by means of a very simple and low-cost method: the drawing of graphite films on the rough surface of mechanically polished n-CdTe single crystal substrates. The unoptimized heterojunctions showed promising, rectifying, and photoelectrical parameters. The obtained results represent a good starting point for the further development of the simple and low-cost heterojunction photodiodes and gas sensors. (C) 2014 AIP Publishing LLC.
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页数：3
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