Superlattice-like Sb50Se50/Ga30Sb70 thin films for high-speed and high density phase change memory application

被引：31
作者：
Hu, Yifeng [1 ,2 ]
Feng, Xiaoyi [1 ]
Li, Simian [3 ]
Lai, Tianshu [3 ]
Song, Sannian [4 ]
Song, Zhitang [4 ]
Zhai, Jiwei [1 ]
机构：
[1] Tongji Univ, Funct Mat Res Lab, Shanghai 200092, Peoples R China
[2] Jiangsu Univ Technol, Sch Math & Phys, Changzhou 213001, Peoples R China
[3] Sun Yat Sen Univ, Dept Phys, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China
[4] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 15期
关键词：
STABILITY; CELL;
D O I：
10.1063/1.4824472
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Multi-level phase change character of superlattice-like (SLL) Sb50Se50/Ga30Sb70 thin films was investigated through in-situ film resistance measurement. SLL structure of the thin films was confirmed by using transmission electron microscopy. Three resistance states were observed during heating process, and their thermal stability was also examined. A picosecond laser pump-probe system was used to measure phase-change time of the SLL Sb50Se50/Ga30Sb70 thin films. Phase change memory cells based on the SLL [SS(5 nm)/GS(10 nm)](3) thin films were fabricated to test and verify multi-level switch between set and reset states. (C) 2013 AIP Publishing LLC.
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页数：4
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