Superlattice-like Sb50Se50/Ga30Sb70 thin films for high-speed and high density phase change memory application

被引：31
作者：
Hu, Yifeng [1 ,2 ]
Feng, Xiaoyi [1 ]
Li, Simian [3 ]
Lai, Tianshu [3 ]
Song, Sannian [4 ]
Song, Zhitang [4 ]
Zhai, Jiwei [1 ]
机构：
[1] Tongji Univ, Funct Mat Res Lab, Shanghai 200092, Peoples R China
[2] Jiangsu Univ Technol, Sch Math & Phys, Changzhou 213001, Peoples R China
[3] Sun Yat Sen Univ, Dept Phys, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China
[4] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 15期
关键词：
STABILITY; CELL;
D O I：
10.1063/1.4824472
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Multi-level phase change character of superlattice-like (SLL) Sb50Se50/Ga30Sb70 thin films was investigated through in-situ film resistance measurement. SLL structure of the thin films was confirmed by using transmission electron microscopy. Three resistance states were observed during heating process, and their thermal stability was also examined. A picosecond laser pump-probe system was used to measure phase-change time of the SLL Sb50Se50/Ga30Sb70 thin films. Phase change memory cells based on the SLL [SS(5 nm)/GS(10 nm)](3) thin films were fabricated to test and verify multi-level switch between set and reset states. (C) 2013 AIP Publishing LLC.
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页数：4
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  • [1] Phase change random access memory cell with superlattice-like structure
    Chong, TC
    Shi, LP
    Zhao, R
    Tan, PK
    Li, JM
    Lee, HK
    Miao, XS
    Du, AY
    Tung, CH
    [J]. APPLIED PHYSICS LETTERS, 2006, 88 (12)
  • [2] Global and local structures of the Ge-Sb-Te ternary alloy system for a phase-change memory device
    Eom, Jae-Hyeon
    Yoon, Young-Gui
    Park, Changwon
    Lee, Hoonkyung
    Im, Jino
    Suh, Dong-Seok
    Noh, Jin-Seo
    Khang, Yoonho
    Ihm, Jisoon
    [J]. PHYSICAL REVIEW B, 2006, 73 (21)
  • [3] Multi-level phase change memory devices with Ge2Sb2Te5 layers separated by a thermal insulating Ta2O5 barrier layer
    Gyanathan, Ashvini
    Yeo, Yee-Chia
    [J]. JOURNAL OF APPLIED PHYSICS, 2011, 110 (12)
  • [4] Al19Sb54Se27 material for high stability and high-speed phase-change memory applications
    Hu, Yifeng
    Li, Simian
    Lai, Tianshu
    Song, Sannian
    Song, Zhitang
    Zhai, Jiwei
    [J]. SCRIPTA MATERIALIA, 2013, 69 (01) : 61 - 64
  • [5] Multi-Step Resistance Memory Behavior in Ge2Sb2Te5/GeTe Stacked Chalcogenide Films
    Hu, Yifeng
    Sun, Mingcheng
    Song, Sannian
    Song, Zhitang
    Zhai, Jiwei
    [J]. INTEGRATED FERROELECTRICS, 2012, 140 : 8 - 15
  • [6] Oxygen-doped Sb4Te phase change films for high-temperature data retention and low-power application
    Hu, Yifeng
    Sun, Mingcheng
    Song, Sannian
    Song, Zhitang
    Zhai, Jiwei
    [J]. JOURNAL OF ALLOYS AND COMPOUNDS, 2013, 551 : 551 - 555
  • [7] Antimony alloys for phase-change memory with high thermal stability
    Kao, Kin-Fu
    Chang, Chih-Chung
    Chen, Frederick T.
    Tsai, Ming-Jinn
    Chin, Tsung-Shune
    [J]. SCRIPTA MATERIALIA, 2010, 63 (08) : 855 - 858
  • [8] Breaking the Speed Limits of Phase-Change Memory
    Loke, D.
    Lee, T. H.
    Wang, W. J.
    Shi, L. P.
    Zhao, R.
    Yeo, Y. C.
    Chong, T. C.
    Elliott, S. R.
    [J]. SCIENCE, 2012, 336 (6088) : 1566 - 1569
  • [9] Ultrafast switching in nanoscale phase-change random access memory with superlattice-like structures
    Loke, Desmond
    Shi, Luping
    Wang, Weijie
    Zhao, Rong
    Yang, Hongxin
    Ng, Lung-Tat
    Lim, Kian-Guan
    Chong, Tow-Chong
    Yeo, Yee-Chia
    [J]. NANOTECHNOLOGY, 2011, 22 (25)
  • [10] Investigation of CuSb4Te2 alloy for high-speed phase change random access memory applications
    Lu, Yegang
    Song, Sannian
    Song, Zhitang
    Rao, Feng
    Wu, Liangcai
    Zhu, Min
    Liu, Bo
    Yao, Dongning
    [J]. APPLIED PHYSICS LETTERS, 2012, 100 (19)
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