High-temperature photoluminescence and photoluminescence excitation spectroscopy of Al0.60Ga0.40N/Al0.70Ga0.30N multiple quantum wells

被引：10
|
作者：
Murotani, Hideaki [1 ,2 ]
Nakamura, Katsuto [1 ]
Fukuno, Tomonori [1 ]
Miyake, Hideto [3 ]
Hiramatsu, Kazumasa [3 ]
Yamada, Yoichi [1 ]
机构：
[1] Yamaguchi Univ, Dept Elect & Elect Engn, Ube, Yamaguchi 7558611, Japan
[2] Natl Inst Technol, Tokuyama Coll, Dept Comp Sci & Elect Engn, Shunan, Yamaguchi 7458585, Japan
[3] Mie Univ, Dept Elect & Elect Engn, Tsu, Mie 5148507, Japan
来源：
APPLIED PHYSICS EXPRESS | 2017年 / 10卷 / 02期
关键词：
LUMINESCENCE; ALLOYS; ALGAN;
D O I：
10.7567/APEX.10.021002
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The excitonic optical properties of an Al0.60Ga0.40N/Al0.70Ga0.30N multiple quantum well (MQW) structure were studied using photoluminescence (PL) and PL excitation (PLE) spectroscopy at high temperatures. Clear excitonic PL was observed at temperatures up to 750 K. Biexciton luminescence was clearly observed even at this high temperature. These observations unambiguously demonstrated the extremely high thermal stability of biexcitons in this MQW. Furthermore, additional PL peaks were observed on the low-energy side of the biexciton luminescence. The observation of biexciton two-photon resonance in the PLE spectra of these peaks indicates that these peaks can be explained by processes involving inelastic scattering of excitons and biexcitons.(C) 2017 The Japan Society of Applied Physics
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页数：4
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