Space-time modeling of Raman pulses in silicon-on-insulator optical waveguides

被引：33
作者：
Passaro, Vittorio M. N. [1 ]
De Leonardis, Francesco
机构：
[1] Policlin Bari, Dipartimento Elettrotecn & Elettron, I-70125 Bari, Italy
[2] Policlin Bari, Dipartimento Ingn Ambiente & Sviluppo Sostenibile, I-74100 Taranto, Italy
来源：
JOURNAL OF LIGHTWAVE TECHNOLOGY | 2006年 / 24卷 / 07期
关键词：
integrated optics; nonlinear optics; optical pulse generation; Raman scattering; silicon-on-insulator (SOI) technology;
D O I：
10.1109/JLT.2006.875956
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Stimulated Raman scattering, two-photon absorption, free-carrier dispersion, self-phase and cross-phase modulations induced by the Kerr effect, walk-off,, pump depletion, and polarization coupling are investigated theoretically in silicon-on-insulator optical waveguides. The influence of submicrometer-scale rib waveguide sizes on the time-space evolution of both pump and fundamental and higher order Stokes' picosecond pulses is presented. Finally, the threshold conditions for higher order Stokes' waves have been found and interpolated by a simple formula.
引用
收藏
页码：2920 / 2931
页数：12
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