A Light-Impact Model for p-Type and n-Type Poly-Si TFTs

被引：4

作者：

Papadopoulos, Nikolas P. ^{[1
]}

Hatzopoulos, Alkis A. ^{[1
]}

Papakostas, Dimitris K. ^{[2
]}

Picos, Rodrigo ^{[3
]}

Dimitriadis, Charalabos A. ^{[4
]}

Siskos, Stylianos ^{[5
]}

机构：

[1] Aristotle Univ Thessaloniki, Elect Lab, Dept Elect & Comp Engn, Thessaloniki 54124, Greece

[2] Alexander Technol & Educ Inst Thessaloniki, Dept Elect, Thessaloniki 57400, Greece

[3] Univ Illes Balears, Dept Fis, Baleares 07122, Spain

[4] Aristotle Univ Thessaloniki, Dept Phys, Microelect Device Characterizat & Design Lab, Thessaloniki 54124, Greece

[5] Aristotle Univ Thessaloniki, Dept Phys, Elect Lab, Thessaloniki 54124, Greece

来源：

JOURNAL OF DISPLAY TECHNOLOGY | 2009年 / 5卷 / 07期

关键词：

Light; optical; influence; impact; I-V modeling; polysilicon thin-film transistors (poly-Si TFTs); p-type; n-type; SPICE; THIN-FILM TRANSISTORS; POLYCRYSTALLINE SILICON; SOLAR ILLUMINATION; GRAIN-BOUNDARIES; SEMICONDUCTORS; MOBILITY;

D O I：

10.1109/JDT.2009.2015898

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper introduces and verifies a new light-impact model (LIM) for both p-type and n-type polycrystalline thin-film transistors (poly-Si TFTs). The ratio of the produced current under a specific light intensity (I-d) over the dark current (I-dark) is calculated. The new model has been also implemented in the circuit simulation program HSPICE. Comparative results between measurements and simulated characteristics are presented for different sizes of widths/lengths, different values of the V-ds and V-gs voltages and of light intensities.

引用

页码：265 / 272

页数：8

共 15 条

[1]

AYRES JR, 1994, P I EL ENG CIRC DEV, V141, P27

[2] THE PHOTOCONDUCTIVITY OF POLYCRYSTALLINE SEMICONDUCTORS [J].

CARD, HC .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (05) :3671-3673

[3] ELECTRONIC PROCESSES AT GRAIN-BOUNDARIES IN POLYCRYSTALLINE SEMICONDUCTORS UNDER OPTICAL ILLUMINATION [J].

CARD, HC ;

YANG, ES .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) :397-402

[4] ELECTRICAL-PROPERTIES OF POLYCRYSTALLINE SILICON LAYERS UNDER SOLAR ILLUMINATION [J].

DIMITRIADIS, CA ;

ALEXANDROU, A ;

ECONOMOU, NA .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (10) :3651-3655

[5] On-state drain current modeling of large-grain poly-Si TFTs based on carrier transport through latitudinal and longitudinal grain boundaries [J].

Hatzopoulos, AT ;

Tassis, DH ;

Hastas, NA ;

Dimitriadis, CA ;

Kamarinos, G .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005, 52 (08) :1727-1733

[6] Universal compact model for long- and short-channel Thin-Film Transistors [J].

Iniguez, Benjamin ;

Picos, Rodrigo ;

Veksler, Dmitry ;

Koudymov, A. ;

Shur, Michael S. ;

Ytterdal, Trond ;

Jackson, Warren .

SOLID-STATE ELECTRONICS, 2008, 52 (03) :400-405

[7] CARRIER MOBILITY IN POLYCRYSTALLINE SILICON UNDER SOLAR ILLUMINATION [J].

JOSHI, DP ;

SRIVASTAVA, RS .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (08) :2375-2378

[8]

JOSHI DP, 1996, J APPL PHYS, V89, P2849

[9]

MITSUTOSHI M, 1999, J APPL PHYS, V86, P5556

[10] Modeling the impact of light on the performance of polycrystalline thin-film transistors at the sub-threshold region [J].

Papadopoulos, N. P. ;

Hatzopoulos, A. A. ;

Papakostas, D. K. ;

Dimitriadis, C. A. ;

Siskos, S. .

MICROELECTRONICS JOURNAL, 2006, 37 (11) :1313-1320

← 1 2 →