3.3 THz Quantum Cascade Laser Based on a Three GaAs/AlGaAs Quantum-Well Active Module with an Operating Temperature above 120 K

被引：3

作者：

Khabibullin, R. A. ^{[1
,2
]}

Maremyanin, K., V ^{[3
,4
]}

Ponomarev, D. S. ^{[1
]}

Galiev, R. R. ^{[1
,2
]}

Zaycev, A. A. ^{[5
]}

Danilov, A., I ^{[6
]}

Vasil'evskii, I. S. ^{[7
]}

Vinichenko, A. N. ^{[7
]}

Klochkov, A. N. ^{[7
]}

Afonenko, A. A. ^{[8
]}

Ushakov, D., V ^{[8
]}

Morozov, S., V ^{[3
,4
]}

Gavrilenko, V., I ^{[3
,4
]}

机构：

[1] Russian Acad Sci, VG Mokerov Inst Ultra High Frequency Semicond Ele, Moscow 117105, Russia

[2] Ioffe Inst, St Petersburg 194021, Russia

[3] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603087, Russia

[4] Lobachevsky State Univ Nizhny Novgorod, Nizhnii Novgorod 603950, Russia

[5] Natl Res Univ Elect Technol, Moscow 124498, Zelenograd, Russia

[6] JSC Polyus Res Inst MF Stelmakh, Moscow 117342, Russia

[7] Natl Res Nucl Univ MEPhI, Moscow 115409, Russia

[8] Belarusian State Univ, Minsk 220030, BELARUS

来源：

SEMICONDUCTORS | 2022年 / 56卷 / 02期

基金：

俄罗斯科学基金会;

关键词：

quantum cascade laser; terahertz range; quantum well; molecular-beam epitaxy; METAL WAVE-GUIDE; OUTPUT POWER;

D O I：

10.1134/S1063782622010080

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The design of a terahertz (THz) quantum cascade laser (QCL) with an active module based on three GaAs/Al-0(.1)8 Ga-0.82 As quantum wells for high-temperature generation at a frequency of about 3.3 THz is optimized. A heterostructure based on the developed design with an active region thickness of 10 mu m is grown by molecular-beam epitaxy with a deviation of the active-module thickness from the nominal of less than 1%. The fabricated THz QCLs with a double metal waveguide demonstrate lasing up to a temperature of 125 K. Investigations of the I-Vcharacteristics, the dependences of the integrated emission on the current, and the lasing spectra show good agreement with the calculated characteristics.

引用

页码：71 / 77

页数：7

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