Anisotropy in the wet-etching of semiconductors

被引：41

作者：

Kelly, John J. ^{[1
]}

Philipsen, Harold G. G. ^{[1
]}

机构：

[1] Univ Utrecht, Debye Inst, NL-3507 TA Utrecht, Netherlands

来源：

CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE | 2005年 / 9卷 / 1-2期

关键词：

wet-etching; silicon; III-V semiconductors; electrochemistry; galvanic effects;

D O I：

10.1016/j.cossms.2006.04.003

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The surface chemistry and electrochemistry of the anisotropic etching of semiconductors are reviewed. Recent insights into the anisotropic chemical etching of silicon in alkaline solution and of electrochemical etching of anisotropic pores in n-type semiconductors are described. The possible role of galvanic effects in open-circuit etching is emphasized. (c) 2006 Published by Elsevier Ltd.

引用

页码：84 / 90

页数：7

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