Hybrid Graphene/Fluoropolymer Field-Effect Transistors With Improved Device Performance

被引:3
|
作者
Ha, Tae-Jun [1 ]
机构
[1] Kwangwoon Univ, Seoul 139701, South Korea
基金
新加坡国家研究基金会;
关键词
Carbon-fluorine dipoles; chemical vapor deposition (CVD) grown monolayer graphene; fluoropolymer; hydrophobic; GRAPHENE DEVICES; HIGH-QUALITY; FILMS; TEMPERATURE; TRANSPORT; CARBON;
D O I
10.1109/TED.2015.2494602
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We demonstrate high-performance field-effect transistors consisting of hybrid graphene/fluoropolymer films by investigating the molecular interaction with strong carbon-fluorine dipoles and hydrophobic surface characteristics. A simple and reproducible solution-coating method on a chemical vapor deposition grown monolayer graphene was employed with fluoropolymer, amorphous CYTOP, and polycrystalline poly(vinylidene fluoride-co-trifluoroethylene) as an interacting layer. All of the key device metrics, including field-effect mobility, Dirac voltage, residual carrier concentration, ON-OFF current ratio, and electron-hole transport symmetry, were substantially improved. Significantly, the Dirac voltage shifted in both directions toward zero, regardless of its initial positions of the Dirac voltage after molecular encapsulation with fluoropolymers. We also demonstrate the improved stability of hybrid graphene/fluoropolymer films that possesses a hydrophobic surface through repelling hydroxyl (-OH) functional groups from the graphene surface.
引用
收藏
页码:4334 / 4338
页数:5
相关论文
共 50 条
  • [31] Delay Analysis of Graphene Field-Effect Transistors
    Wang, Han
    Hsu, Allen
    Lee, Dong Seup
    Kim, Ki Kang
    Kong, Jing
    Palacios, Tomas
    IEEE ELECTRON DEVICE LETTERS, 2012, 33 (03) : 324 - 326
  • [32] Simulation of graphene nanoribbon field-effect transistors
    Fiori, Gianluca
    Iannaccone, Giuseppe
    IEEE ELECTRON DEVICE LETTERS, 2007, 28 (08) : 760 - 762
  • [33] Graphene Field-Effect Transistors with Ferroelectric Gating
    Zheng, Yi
    Ni, Guang-Xin
    Toh, Chee-Tat
    Tan, Chin-Yaw
    Yao, Kui
    Oezyilmaz, Barbaros
    PHYSICAL REVIEW LETTERS, 2010, 105 (16)
  • [34] Hysteresis reversion in graphene field-effect transistors
    Liao, Zhi-Min
    Han, Bing-Hong
    Zhou, Yang-Bo
    Yu, Da-Peng
    JOURNAL OF CHEMICAL PHYSICS, 2010, 133 (04):
  • [35] Modeling Techniques for Graphene Field-effect Transistors
    Lu, Haiyan
    Wu, Yun
    Huo, Shuai
    Xu, Yuehang
    Kong, Yuechan
    Chen, Tangshen
    2015 IEEE INTERNATIONAL CONFERENCE ON COMMUNICATION PROBLEM-SOLVING (ICCP), 2015, : 373 - 376
  • [36] Effect of energetic electron irradiation on graphene and graphene field-effect transistors
    Childres, Isaac
    Foxe, Michael
    Jovanovic, Igor
    Chen, Yong P.
    MICRO- AND NANOTECHNOLOGY SENSORS, SYSTEMS, AND APPLICATIONS III, 2011, 8031
  • [37] FEASIBILITY OF HYBRID JOSEPHSON FIELD-EFFECT TRANSISTORS
    CLARK, TD
    PRANCE, RJ
    GRASSIE, ADC
    JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) : 2736 - 2743
  • [38] Device performance and density of trap states of organic and inorganic field-effect transistors
    Haeusermann, Roger
    Willa, Kristin
    Bluelle, Balthasar
    Morf, Tobias
    Facchetti, Antonio
    Chen, Zhihua
    Lee, Jiyoul
    Batlogg, Bertram
    ORGANIC ELECTRONICS, 2016, 28 : 306 - 313
  • [39] Model and Performance Evaluation of Field-Effect Transistors Based on Epitaxial Graphene on SiC
    Cheli, Martina
    Michetti, Paolo
    Iannaccone, Giuseppe
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2010, 57 (08) : 1936 - 1941
  • [40] Assessment of high-frequency performance limits of graphene field-effect transistors
    Chauhan, Jyotsna
    Guo, Jing
    NANO RESEARCH, 2011, 4 (06) : 571 - 579