Band alignment at the In2S3/Cu2ZnSnS4 heterojunction interface investigated by X-ray photoemission spectroscopy

被引：9

作者：

Lin, Lingyan ^{[1
]}

Yu, Jinling ^{[1
]}

Cheng, Shuying ^{[1
]}

Lu, Peimin ^{[1
]}

Lai, Yunfeng ^{[1
]}

Lin, Sile ^{[1
]}

Zhao, Pengyi ^{[1
]}

机构：

[1] Fuzhou Univ, Inst Micro Nano Devices & Solar Cells, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2014年 / 116卷 / 04期

关键词：

INDIUM SULFIDE; BUFFER LAYER; SOLAR-CELLS; THIN-FILMS;

D O I：

10.1007/s00339-014-8431-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The band alignment at the In2S3/Cu2ZnSnS4 heterojunction interface is investigated by X-ray photoemission spectroscopy. In2S3 is thermally evaporated onto the contamination-free polycrystalline Cu2ZnSnS4 surface prepared by magnetron sputtering. The valence band offset is measured to be 0.46 +/- A 0.1 eV, which matches well with the valance band offset value 0.49 eV calculated using "transitivity" method. The conduction band offset is determined to be 0.82 +/- A 0.1 eV, indicating a 'type I' band alignment at the heterojunction interface.

引用

收藏

页码：2173 / 2177

页数：5

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