In-situ measurement of molecular orientation of the pentacene ultrathin films grown on SiO2 substrates

被引:24
|
作者
Yoshikawa, Genki
Miyadera, Tetsuhiko
Onoki, Ryo
Ueno, Keiji
Nakai, Ikuyo
Entani, Shiro
Ikeda, Susumu
Guo, Dong
Kiguchi, Manabu
Kondoh, Hiroshi
Ohta, Toshiaki
Saiki, Koichiro
机构
[1] Univ Tokyo, Grad Sch Sci, Dept Chem, Bunkyo Ku, Tokyo 1130033, Japan
[2] Saitama Univ, Fac Sci, Dept Chem, Urawa, Saitama 3388570, Japan
[3] Univ Tokyo, Grad Sch Frontier Sci, Dept Comnplex Sci & Engn, Kashiwa, Chiba 2778561, Japan
[4] Hokkaido Univ, Grad Sch Sci, Dept Chem, Sapporo, Hokkaido 0600810, Japan
关键词
pentacene; in-situ characterization; atomic force microscopy; near edge extended X-ray absorption fine structure (NEXAFS); surface structure; morphology; roughness and topography; silicon oxides; aromatics; thin film structures;
D O I
10.1016/j.susc.2006.04.012
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Molecular orientations of pentacene ultrathin films grown on SiO2 substrates were studied without the influence of the atmosphere by vacuum atomic force microscopy (V-AFM) and near edge X-ray absorption fine structure (NEXAFS). The experimental processes from deposition of pentacene to characterization of films were performed under vacuum condition without exposure to the atmosphere. V-AFM and NEXAFS measurements showed that pentacene molecules tend to grow on SiO2 surface with their molecular long axes perpendicular to the substrate surfaces (standing-mode) irrespective of preparation procedure of SiO2 substrate. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:2518 / 2522
页数:5
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