CIGSS films prepared by sol-gel route

被引：45

作者：

Oliveira, L. ^{[1
]}

Todorov, T. ^{[1
]}

Chassaing, E. ^{[2
]}

LinCot, D. ^{[2
]}

Carda, J. ^{[1
]}

Escribano, P. ^{[1
]}

机构：

[1] Univ Jaume 1, Organ & Inorgan Chem Dept, Castellon De La Plana 12071, Spain

[2] IRDEP, F-78401 Chatou, France

来源：

THIN SOLID FILMS | 2009年 / 517卷 / 07期

关键词：

Chalcopyrite; Spin-coating; Pentanary; Sol-gel; Photovoltaic; Low-cost; Band gap; CUINS2; FILMS; CELLS; ELECTRODEPOSITION; DEPOSITION; PRESSURE; MODULES;

D O I：

10.1016/j.tsf.2008.10.104

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Homogeneous layers of amorphous oxides of Cu-In, Cu-In-Ga were deposited by a sol-gel method. Selenization, sulfurization and sequential selenization + sulfurization treatments were performed with elemental S and Se, respectively. Adherent pinhole-free layers were observed by scanning electron microscopy. X-ray diffraction indicated increased gallium incorporation in selenized in comparison with sulfurized films. Band gap values in the range of 1.18-1.63 eV were obtained. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：2272 / 2276

页数：5

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