CIGSS films prepared by sol-gel route

被引：45
作者：
Oliveira, L. [1 ]
Todorov, T. [1 ]
Chassaing, E. [2 ]
LinCot, D. [2 ]
Carda, J. [1 ]
Escribano, P. [1 ]
机构：
[1] Univ Jaume 1, Organ & Inorgan Chem Dept, Castellon De La Plana 12071, Spain
[2] IRDEP, F-78401 Chatou, France
来源：
THIN SOLID FILMS | 2009年 / 517卷 / 07期
关键词：
Chalcopyrite; Spin-coating; Pentanary; Sol-gel; Photovoltaic; Low-cost; Band gap; CUINS2; FILMS; CELLS; ELECTRODEPOSITION; DEPOSITION; PRESSURE; MODULES;
D O I：
10.1016/j.tsf.2008.10.104
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Homogeneous layers of amorphous oxides of Cu-In, Cu-In-Ga were deposited by a sol-gel method. Selenization, sulfurization and sequential selenization + sulfurization treatments were performed with elemental S and Se, respectively. Adherent pinhole-free layers were observed by scanning electron microscopy. X-ray diffraction indicated increased gallium incorporation in selenized in comparison with sulfurized films. Band gap values in the range of 1.18-1.63 eV were obtained. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：2272 / 2276
页数：5
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