Electronic bond rupture of Si-Dimers on Si(001)-(2x1) induced by pulsed laser excitation

被引：2
|
作者：
Kanasaki, J
Katoh, K
Imanishi, Y
Tanimura, K
机构：
[1] Osaka City Univ, Grad Sch, Dept Mech & Phys Engn, Sumiyoshi Ku, Osaka 5588585, Japan
[2] Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2004年 / 79卷 / 4-6期
关键词：
D O I：
10.1007/s00339-004-2608-z
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A scanning tunneling microscopy study has revealed that 532 nm laser pulses of fluences well below melt and ablation thresholds induce electronic bond rupture of Si-dimers on the Si(001)-(2x1), resulting in the formation of single dimer-vacancies followed by progressive growth into vacancy clusters. The rate of bond rupture on the intrinsic (2x1) structure shows super-linearity with respect to excitation intensity, and saturates as the number of vacancies reaches a few percent, relative to total dimer sites. The mechanism of laser-induced bond rupture is discussed based on these results.
引用
收藏
页码：865 / 868
页数：4
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