Properties of green-light-emitting anodic layers formed on Si substrates in HF/MnO2 mixed solution

被引:3
作者
Xu, Yan Kai [1 ]
Adachi, Sadao [1 ]
机构
[1] Gunma Univ, Grad Sch Engn, Kiryu, Gunma 3768515, Japan
关键词
OXIDIZED POROUS SILICON; PHOTOLUMINESCENCE-EXCITATION SPECTROSCOPY; VISIBLE PHOTOLUMINESCENCE; BLUE PHOTOLUMINESCENCE; EMISSION; LUMINESCENCE; OXIDE; HF; SURFACE; ORIGIN;
D O I
10.1063/1.3142425
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report the properties of anodic layers formed on p-Si substrates in a 50% HF solution with the addition of an oxidizing agent MnO2. The structural and optical properties are investigated using scanning electron microscopy (SEM), photoluminescence (PL), PL excitation, x-ray photoelectron spectroscopy (XPS), and Fourier transform infrared (FTIR) spectroscopy. The anodic layers formed have several unique properties. For example, they are stable in acidic solutions, HF, HCl, and CH3COOH, regardless of light illumination but are unstable in air exposure or in water regardless of light illumination and in methanol under UV illumination. The as-prepared layer emits light in the green spectral region, but an exposure in air without light illumination or in methanol with UV illumination leads to spectral redshift with increasing its intensity. The SEM image indicates that the anodic layer usually shows a double-layered (much roughened top/uniform bottom) structure. The XPS and FTIR spectroscopy support that the anodic layer is any compound of the hydroxyl group or others. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3142425]
引用
收藏
页数:7
相关论文
共 53 条
[1]   MODEL DIELECTRIC-CONSTANTS OF SI AND GE [J].
ADACHI, S .
PHYSICAL REVIEW B, 1988, 38 (18) :12966-12976
[2]   Light-emitting porous silicon synthesized by photoetching in aqueous HF/I2 solution [J].
Adachi, Sadao ;
Kubota, Tomoo .
ELECTROCHEMICAL AND SOLID STATE LETTERS, 2007, 10 (02) :H39-H42
[3]   CHEMICAL SURFACE MODIFICATION OF POROUS SILICON [J].
ANDERSON, RC ;
MULLER, RS ;
TOBIAS, CW .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1993, 140 (05) :1393-1396
[4]   CHARACTERIZATION OF POROUS SILICON INHOMOGENEITIES BY HIGH-SPATIAL-RESOLUTION INFRARED-SPECTROSCOPY [J].
BORGHESI, A ;
SASSELLA, A ;
PIVAC, B ;
PAVESI, L .
SOLID STATE COMMUNICATIONS, 1993, 87 (01) :1-4
[5]   THE ORIGIN OF VISIBLE LUMINESCENCE FROM POROUS SILICON - A NEW INTERPRETATION [J].
BRANDT, MS ;
FUCHS, HD ;
STUTZMANN, M ;
WEBER, J ;
CARDONA, M .
SOLID STATE COMMUNICATIONS, 1992, 81 (04) :307-312
[6]   On the origin of blue luminescence arising from atmospheric impregnation of oxidized porous silicon [J].
Canham, LT ;
Loni, A ;
Calcott, PDJ ;
Simons, AJ ;
Reeves, C ;
Houlton, MR ;
Newey, JP ;
Nash, KJ ;
Cox, TI .
THIN SOLID FILMS, 1996, 276 (1-2) :112-115
[7]   SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].
CANHAM, LT .
APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048
[8]  
CANHAM LT, 1997, PROPERTIES POROUS SI, P249
[9]   Microstructural evolution of thermally treated low-dielectric constant SiOC:H films prepared by PECVD [J].
Das, G ;
Mariotto, G ;
Quaranta, A .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2006, 153 (03) :F46-F51
[10]   Ballistic electron emission microscopy study of barrier height inhomogeneities introduced in Au/n-Si Schottky contacts by a HF pretreatment [J].
Detavernier, C ;
Van Meirhaeghe, RL ;
Donaton, R ;
Maex, K ;
Cardon, F .
JOURNAL OF APPLIED PHYSICS, 1998, 84 (06) :3226-3231