Determination of pore-size distribution in low-dielectric thin films

被引：186

作者：

Gidley, DW ^{[1
]}

Frieze, WE

Dull, TL

Sun, J

Yee, AF

Nguyen, CV

Yoon, DY

机构：

[1] Univ Michigan, Dept Phys, Ann Arbor, MI 48109 USA

[2] Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA

[3] IBM Corp, Almaden Res Ctr, San Jose, CA 95120 USA

[4] Seoul Natl Univ, Dept Chem, Seoul 151742, South Korea

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 10期

关键词：

D O I：

10.1063/1.126009

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Positronium annihilation lifetime spectroscopy is used to determine the pore-size distribution in low-dielectric thin films of mesoporous methylsilsesquioxane. A physical model of positronium trapping and annihilating in isolated pores is presented. The systematic dependence of the deduced pore-size distribution on pore shape/dimensionality and sample temperature is predicted using a simple quantum mechanical calculation of positronium annihilation in a rectangular pore. A comparison with an electron microscope image is presented. (C) 2000 American Institute of Physics. [S0003-6951(00)03810-9].

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页码：1282 / 1284

页数：3

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