Nonlinear pull-in instability of boron nitride nano-switches considering electrostatic and Casimir forces

被引:0
作者
Arani, A. Ghorbanpour [1 ,2 ]
Jalilvand, A. [1 ]
Ghaffari, M. [1 ]
Mazraehshahi, M. Talebi [1 ]
Kolahchi, R. [1 ]
Roudbari, M. A. [1 ]
Amir, S. [1 ]
机构
[1] Univ Kashan, Fac Mech Engn, Kashan, Iran
[2] Univ Kashan, Inst Nanosci & Nanotechnol, Kashan, Iran
关键词
BNNB; Pull-in instability; Nano-switch; NEMS; Casimir force; ENCAPSULATED POLYSILICON RESONATORS; MODIFIED DECOMPOSITION METHOD; BOUNDARY-VALUE-PROBLEMS; MICRO-ACTUATORS; BEHAVIOR; NANOTUBES; DYNAMICS; BUNDLE; ORDER; CNTS;
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Pull-in instability of Boron Nitride Nano-Beam (BNNB) under the combined electrostatic and Casimir force as nano-switch is presented. Using Euler-Bernoulli Beam (EBB) theory, nonlocal piezoelasticity theory, von Karman geometric nonlinearity and virtual work principle, the nonlinear governing differential equations are obtained. The equations are discretized by two types of numerical methods, namely the Modified Adomian Decomposition (MAD) method and Differential Quadrature Method (DQM). Analysis of lower pull-in voltage values is considered for nano-switches with different boundary conditions. The detailed parametric study is considered, focusing on the remarkable effects of nonlocal parameter, beam length, boundary condition, geometrical aspect ratio and gap distance on the behavior of the pull-in instability voltage. The obtained results of DQM and MAD are compared with published relevant study. This work is hoped to be useful in designing and manufacturing of Nano-Electro-Mechanical Systems (NEMS) in advanced applications such as high-tech devices and nano-transistors with great applications in computer industry. (C) 2014 Sharif University of Technology. All rights reserved.
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页码:1183 / 1196
页数:14
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