Analysis of ZnO and ZnMgO nanopillars grown by self-organization

被引:60
作者
Kling, R [1 ]
Kirchner, C
Gruber, T
Reuss, F
Waag, A
机构
[1] Univ Ulm, Dept Semicond Phys, D-89081 Ulm, Germany
[2] Braunschweig Tech Univ, Inst Semicond Technol, D-38106 Braunschweig, Germany
关键词
D O I
10.1088/0957-4484/15/8/032
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In this contribution we analyse the structural and optical properties of ZnO as well as ZnMgO nanopillars grown catalyst-free by metalorganic vapour-phase epitaxy. The nanostructures were grown directly onto different substrate materials with various orientations. The nanopillars deposited on a-plane sapphire show the best vertical c-axis alignment and have a typical diameter of about 50 nm and a height of several micrometres, depending on growth time. We achieved well ordered, almost completely c-axis oriented pillars, as confirmed by scanning electron microscopy and high resolution x-ray diffraction. Photoluminescence measurements revealed very narrow donor-bound exciton emission lines with half widths as small as 0.5 meV. In order to investigate the possibility of a combination of band gap engineering and nanopillar growth, ZnMgO nanopillars were also grown. The Mg incorporation was confirmed by photoluminescence measurements and a blue shift of the band gap of up to 170 meV could be achieved for the nanopillars with the highest Mg concentration.
引用
收藏
页码:1043 / 1046
页数:4
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