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Enhanced sputtering and incorporation of Mn in implanted GaAs and ZnO nanowires
被引:20
作者:

Johannes, A.
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Univ Jena, Inst Solid State Phys, D-07743 Jena, Germany Univ Jena, Inst Solid State Phys, D-07743 Jena, Germany

Noack, S.
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Univ Jena, Inst Solid State Phys, D-07743 Jena, Germany Univ Jena, Inst Solid State Phys, D-07743 Jena, Germany

Paschoal, W., Jr.
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机构:
Lund Univ, Solid State Phys Nanometer Struct Consortium, SE-22100 Lund, Sweden
Halmstad Univ, Dept Math Phys & Elect Engn, SE-30118 Halmstad, Sweden Univ Jena, Inst Solid State Phys, D-07743 Jena, Germany

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Jacobsson, D.
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Lund Univ, Solid State Phys Nanometer Struct Consortium, SE-22100 Lund, Sweden Univ Jena, Inst Solid State Phys, D-07743 Jena, Germany

Pettersson, H.
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机构:
Lund Univ, Solid State Phys Nanometer Struct Consortium, SE-22100 Lund, Sweden
Halmstad Univ, Dept Math Phys & Elect Engn, SE-30118 Halmstad, Sweden Univ Jena, Inst Solid State Phys, D-07743 Jena, Germany

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Dick, K. A.
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Lund Univ, Ctr Anal & Synth, S-22100 Lund, Sweden Univ Jena, Inst Solid State Phys, D-07743 Jena, Germany

Martinez-Criado, G.
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机构:
European Synchrotron Radiat Facil, F-38043 Grenoble, France Univ Jena, Inst Solid State Phys, D-07743 Jena, Germany

Burghammer, M.
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机构:
European Synchrotron Radiat Facil, F-38043 Grenoble, France Univ Jena, Inst Solid State Phys, D-07743 Jena, Germany

Ronning, C.
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机构:
Univ Jena, Inst Solid State Phys, D-07743 Jena, Germany Univ Jena, Inst Solid State Phys, D-07743 Jena, Germany
机构:
[1] Univ Jena, Inst Solid State Phys, D-07743 Jena, Germany
[2] Lund Univ, Solid State Phys Nanometer Struct Consortium, SE-22100 Lund, Sweden
[3] Halmstad Univ, Dept Math Phys & Elect Engn, SE-30118 Halmstad, Sweden
[4] Lund Univ, Ctr Anal & Synth, S-22100 Lund, Sweden
[5] European Synchrotron Radiat Facil, F-38043 Grenoble, France
基金:
瑞典研究理事会;
关键词:
ion beam;
sputter yield;
nanowires;
x-ray fluorescence;
GaAs;
ZnO;
monte carlo simulation;
ION-IMPLANTATION;
SIMULATION;
NANOSTRUCTURES;
CODE;
D O I:
10.1088/0022-3727/47/39/394003
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
We simulated and experimentally investigated the sputter yield of ZnO and GaAs nanowires, which were implanted with energetic Mn ions at room temperature. The resulting thinning of the nanowires and the dopant concentration with increasing Mn ion fluency were measured by accurate scanning electron microscopy (SEM) and nano-x-Ray Fluorescence (nanoXRF) quantification, respectively. We observed a clearly enhanced sputter yield for the irradiated nanowires compared to bulk, which is also corroborated by iradina simulations. These show a maximum if the ion range matches the nanowire diameter. As a consequence of the erosion thinning of the nanowire, the incorporation of the Mn dopants is also enhanced and increases non-linearly with increasing ion fluency.
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