A Promising Modified SILAR Sequence for the Synthesis of Photoelectrochemically Active Cu2ZnSnS4 (CZTS) Thin Films

被引：7

作者：

Suryawanshi, M. P. ^{[1
,2
,3
]}

Shin, S. W. ^{[4
]}

Agawane, G. L. ^{[1
,2
]}

Gurav, K. V. ^{[1
,2
]}

Ghorpade, U. V. ^{[1
,2
]}

Hong, C. W. ^{[1
,2
]}

Gaikwad, M. A. ^{[3
]}

Patil, P. S. ^{[3
]}

Kim, Jin Hyeok ^{[1
,2
]}

Moholkar, A. V. ^{[3
]}

机构：

[1] Chonnam Natl Univ, Dept Mat Sci & Engn, Kwangju 500757, South Korea

[2] Chonnam Natl Univ, Optoelect Convergence Res Ctr, Kwangju 500757, South Korea

[3] Shivaji Univ, Dept Phys, Thin Film Nanomat Lab, Kolhapur 416004, Maharashtra, India

[4] Inst for Basic Sci Korea, Ctr Nanomat & Chem React, Taejon 305701, South Korea

来源：

ISRAEL JOURNAL OF CHEMISTRY | 2015年 / 55卷 / 10期

关键词：

Cu2ZnSnS4 (CZTS); FE-SEM studies; photochemistry; Raman spectroscopy; SILAR; SOLAR-CELLS; PERFORMANCE; TIME;

D O I：

10.1002/ijch.201400203

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A promising modified SILAR sequence approach has been employed for the synthesis of photoelectrochemically active Cu2ZnSnS4 (CZTS) thin films. To study the influence of sulfurization temperatures on the CZTS thin films, the CZTS precursor thin films were annealed at temperatures of 520, 540, 560, and 580 degrees C for 1h in an H2S (5%)+Ar (95%) atmosphere. These films were characterized for their structural, morphological, and optical properties using X-ray diffraction, Raman spectroscopy, field emission scanning electron microscopy, and UV-vis spectrophotometer techniques. The film sulfurized at an optimized temperature of 580 degrees C shows the formation of a prominent CZTS phase with a dense microstructure and optical band gap energy of 1.38eV. The photoelectrochemical (PEC) device fabricated using optimized CZTS thin films sulfurized at 580 degrees C exhibits an open circuit voltage (V-oc) of 0.38V and a short circuit current density (J(sc)) of 6.49mAcm(-2), with a power conversion efficiency () of 0.96%.

引用

页码：1098 / 1102

页数：5

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