Impact of ALD grown passivation layers on silicon nitride based integrated optic devices for very-near-infrared wavelengths

被引：24

作者：

Khanna, Amit ^{[1
,4
]}

Subramanian, Ananth Z. ^{[1
]}

Hayrinen, Markus ^{[2
]}

Selvaraja, Shankar ^{[3
]}

Verheyen, Peter ^{[3
]}

Van Thourhout, Dries ^{[1
]}

Honkanen, Seppo ^{[2
]}

Lipsanen, Harri ^{[4
]}

Baets, Roel ^{[1
]}

机构：

[1] Univ Ghent, Ctr Nano & Biophoton, Ghent Univ Imec, Photon Res Grp, B-9000 Ghent, Belgium

[2] Univ Eastern Finland, Inst Photon, FI-80101 Joensuu, Finland

[3] IMEC, B-3001 Louvain, Belgium

[4] Aalto Univ, Sch Elect Engn, Dept Micro & Nanosci, Espoo 02150, Finland

来源：

OPTICS EXPRESS | 2014年 / 22卷 / 05期

基金：

芬兰科学院; 欧洲研究理事会;

关键词：

CMOS-COMPATIBLE PLATFORM; WAVE-GUIDES; PROPAGATION LOSS; FABRICATION; FREQUENCY; LINE;

D O I：

10.1364/OE.22.005684

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A CMOS compatible post-processing method to reduce optical losses in silicon nitride (Si3N4) integrated optical waveguides is demonstrated. Using thin layer atomic layer deposition (ALD) of aluminum oxide (Al2O3) we demonstrate that surface roughness can be reduced. A 40 nm thick Al2O3 layer is deposited by ALD over Si3N4 based strip waveguides and its influence on the surface roughness and the waveguide loss is studied. As a result, an improvement in the waveguide loss, from very high loss (60 dB/cm) to low-loss regime (similar to 5 dB/cm) is reported for a 220 nm x 500 nm Si3N4 wire at 900 nm wavelength. This opens prospects to implement very low loss waveguides. (C) 2014 Optical Society of America

引用

页码：5684 / 5692

页数：9

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