Ultrasensitive Self-Powered Deep-Ultraviolet Photodetector Based on In Situ Epitaxial Ga2O3/Bi2Se3 Heterojunction

被引：13

作者：

Zhao, Bowen ^{[1
,2
,3
]}

Li, Kuangkuang ^{[4
,5
]}

Liu, Qing ^{[4
,5
]}

Liu, Xingzhao ^{[4
,5
]}

机构：

[1] Chinese Acad Sci, State Key Lab Opt Technol Nano Fabricat & Microen, Chengdu 610209, Peoples R China

[2] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 611731, Peoples R China

[3] Univ Elect Sci & Technol China, Sch Elect Sci & Engn, Chengdu 611731, Peoples R China

[4] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 611731, Peoples R China

[5] Univ Elect Sci & Technol China, Sch Elect Sci & Engn, Chengdu 611731, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2022年 / 69卷 / 04期

基金：

中国国家自然科学基金;

关键词：

Deep-ultraviolet photodetector (DUV PD); Ga2O3/Bi2Se3; heterojunction; molecular beam epitaxy (MBE); thin film; SOLAR-BLIND PHOTODETECTOR; UV PHOTODETECTOR; PERFORMANCE; RESPONSIVITY; CELLS;

D O I：

10.1109/TED.2022.3154682

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The Ga2O3-based deep-ultraviolet photodetectors (DUV PDs) possess great potential due to the suitable bandgap and desired stability. However, the compulsive external bias and the undesired response speed severely limit its large-scale implementations. Herein, we report a highly efficient self-powered Ga2O3/Bi2Se3 heterojunction PD, fabricated through an in situ epitaxial deposition process. The Ga2O3 and Bi2Se3 films are found to present a van der Waals bonding with great orientation crystallinities. Under the self-powered mode, the device presents a stable and favorable photoresponsivity with an ultralow dark current of 3.12 pA and an excellent detectivity of 6.23 x 10(13) Jones under 245-nm light illumination. Moreover, the device presents an ultrafast rise and decay response time of 0.6 and 1.2 ms, which achieves more than four orders of magnitude reduction compared to the Ga2O3 photoconductor. Such excellent improvement can be attributed to the high-quality Ga2O3/Bi2Se3 heterojunction and the high carrier mobility of Bi2Se3, which is beneficial for improving the separation and transfer efficiency of the electron-hole pairs. This work provides a new direction for developing the Ga2O3 based DUV PD.

引用

页码：1894 / 1899

页数：6

共 42 条

[41] Efficient Sb2Se3 sensitized solar cells prepared through a facile SILAR process and improved performance by interface modification [J].