Raman and infrared studies of the metal-insulator transition in BaCo1-xNixS2

被引:1
作者
Sugai, S [1 ]
Yamane, N
Kashima, S
Takenaka, K
Sasaki, H
Sato, M
Shamoto, S
机构
[1] Nagoya Univ, Dept Phys, Fac Sci, Chikusa Ku, Nagoya, Aichi 4648602, Japan
[2] Tohoku Univ, Fac Engn, Sendai, Miyagi 9808579, Japan
来源
PHYSICA B | 2000年 / 281卷
关键词
metal-insulator transition; enhanced density of states; Raman scattering;
D O I
10.1016/S0921-4526(99)00835-2
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The electronic states near the insulator-metal transition of stoichiometric BaCo1-xNixS2 were investigated utilizing the different selection rule for Raman scattering from reflection spectroscopy. The electronic Raman component at low energies is large even in the insulating phase at x = 0. The spectral intensity is preserved from 300 to 20 K in the insulating phase (x less than or equal to 0.18), whereas in the metallic phase (x greater than or equal to 0.24), the B-1g and B-2g spectra increase, as temperature decreases. It suggests that the change is induced by the itinerant electronic states through the mass-enhanced type insulator-metal transition. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:627 / 628
页数:2
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