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Effect of hydrogen addition to fluorocarbon gases (CF4, C4F8) in selective SiO2/Si etching by electron cyclotron resonance plasma
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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A,
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FREE-RADICALS IN AN INDUCTIVELY-COUPLED ETCHING PLASMA
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JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,
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HIGH-RATE AND HIGHLY SELECTIVE SIO2 ETCHING EMPLOYING INDUCTIVELY-COUPLED PLASMA AND DISCUSSION ON REACTION-KINETICS
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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
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Effects of magnetic field on oxide etching characteristics in planar type radio frequency inductively coupled plasma
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FLUOROCARBON HIGH-DENSITY PLASMAS .1. FLUOROCARBON FILM DEPOSITION AND ETCHING USING CF4 AND CHF3
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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A,
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