Angle dependence of the local electronic properties of the graphene/MoS2 interface determined by ab initio calculations

被引:20
|
作者
Di Felice, D. [1 ]
Abad, E. [2 ]
Gonzalez, C. [1 ,3 ]
Smogunov, A. [1 ]
Dappe, Y. J. [1 ]
机构
[1] Univ Paris Saclay, CEA, CNRS, SPEC, F-91191 Gif Sur Yvette, France
[2] German Res Sch Simulat Sci GmbH, D-52425 Julich, Germany
[3] Univ Granada, Dept Elect & Tecnol Comp, Campus Fuente Nueva & CITIC,Campus Aynadamar, E-18071 Granada, Spain
关键词
graphene/; MoS2; DFT; STM; vdW heterostructures; electronic structure; DER-WAALS HETEROSTRUCTURES; MOS2; MONOLAYER; TRANSISTORS; FIELD; BILAYER;
D O I
10.1088/1361-6463/aa64fe
中图分类号
O59 [应用物理学];
学科分类号
摘要
We present a full theoretical study of the graphene/MoS2 interface, using density functional theory (DFT) calculations and scanning tunneling microscopy (STM) simulations. In particular, we show that contrary to previous theoretical predictions, the rotation angle between the layers has no influence on the global electronic properties of the interface, providing a careful choice of lattice vectors and supercells is made, in order to avoid artificial modifications in the electronic structure. However, small modifications of the local electronic properties do appear, as revealed by the calculated STM images. This result might be exploited in nanoelectronic devices by specific local contacting.
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页数:6
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