A lateral ZnO nanowire UV photodetector prepared on a ZnO:Ga/glass template

被引：23

作者：

Lu, Chien-Yuan ^{[1
,2
]}

Chang, Sheng-Po ^{[1
,2
]}

Chang, Shoou-Jinn ^{[1
,2
]}

Hsueh, Ting-Jen ^{[1
,2
]}

Hsu, Cheng-Liang ^{[3
]}

Chiou, Yu-Zung ^{[4
]}

Chen, I-Cherng ^{[5
]}

机构：

[1] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Ctr Micro Nano Sci & Technol, Inst Microelect, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Ctr Micro Nano Sci & Technol, Dept Elect Engn, Tainan 70101, Taiwan

[3] Natl Univ Tainan, Dept Elect Engn, Tainan 700, Taiwan

[4] So Taiwan Univ Technol, Dept Elect Engn, Tainan 710, Taiwan

[5] Ind Technol Res Inst S, Micro Syst Technol Ctr, Tainan 709, Taiwan

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2009年 / 24卷 / 07期

关键词：

GROWTH; NANORODS; FABRICATION; OXYGEN; FILMS;

D O I：

10.1088/0268-1242/24/7/075005

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the lateral growth of ZnO nanowires on a ZnO:Ga/glass template. By reducing the oxygen flow ratio, it was found that we could change the growth direction of ZnO nanowires from vertical to lateral. ZnO nanowire-based photodetectors were also fabricated using the laterally grown ZnO nanowires. It was found that the detector current increased by more than 12 times upon ultraviolet illumination. It was also found that the corresponding time constant of our lateral ZnO nanowire photodetector was around 452 ms.

引用

页数：4

共 30 条

[1] Substrate atomic-termination-induced anisotropic growth of ZnO nanowires/nanorods by the VLS process [J].