NiSi-Tb alloy interlayer properties at NiSi/Si junctions for improving thermal stability and contact resistance

被引：2
作者：
Eadi, Sunil Babu [1 ]
Song, Ki-Woo [1 ]
Song, Hyeong-Sub [1 ]
Kim, Sang Hyeon [1 ]
Choi, Hyun-Woong [1 ]
Lee, Hi-Deok [1 ]
机构：
[1] Chungnam Natl Univ, Dept Elect Engn, Daejeon, South Korea
来源：
MICROELECTRONIC ENGINEERING | 2021年 / 236卷
基金：
新加坡国家研究基金会;
关键词：
Tb interlayer; Sheet resistance; Nickel silicide; Rapid thermal processing; Contact resistance;
D O I：
10.1016/j.mee.2020.111482
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this study, effect of Terbium (Tb) on electrical and thermal properties of NiSi/Si contacts are studied. A thin Tb interlayer was deposited at NiSi/Si junctions and using Rapid Thermal process (RTP), a new NiSi-Tb alloy was formed. The specific contact resistivity (rho c) was measured for NiSi-Tb alloys formed on n/p-Si substrates. The rho c of 6.61 & 3.57 x 10-5 Omega.cm(2) for n-Si and 7.52 & 4.53 x 10(-5) Omega.cm(2) for p-Si, obtained for NiSi without and with Tb Interlayer correspondingly. The thermal stability properties show improvement beyond 500 degrees C by using Tb interlayer. The enhancement of interfacial properties by introduction of Tb interlayer could be responsible for the improvement of rho c and thermal stability.
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页数：7
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