Oblique-Angle Sputtering Effects on Characteristics of Nanocolumnar Structure Anisotropic Indium Tin Oxide Films

被引:20
作者
Chen, Lung-Chien [1 ]
Chen, Cheng-Chiang [1 ]
Sung, Yen-Tang [1 ]
Hsu, Ya-Ying [1 ]
机构
[1] Natl Taipei Univ Technol, Dept Electroopt Engn, Taipei 106, Taiwan
关键词
crystallisation; electrical resistivity; energy gap; excitons; indium compounds; lattice constants; nanostructured materials; semiconductor materials; semiconductor thin films; spectral line shift; sputter deposition; ITO THIN-FILMS; ROOM-TEMPERATURE; ELECTRICAL-PROPERTIES; OPTICAL-PROPERTIES; BEAM EVAPORATION; DEPOSITION; CONTACTS; FABRICATION; GLASS;
D O I
10.1149/1.3116248
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
We present a nanocolumnar structure anisotropic indium tin oxide (ITO) film deposited at different oblique angles by a radio-frequency magnetron sputtering system. Three dominant diffraction peaks were observed. The location of peaks SnO2(110), In2O3(222), and In2O3(400) increases from 29.39, 31.34, and 36.34 degrees to 29.45, 31.60, and 36.48 degrees, respectively, as the sputtering oblique angle increases from 0 to 80 degrees. This may be attributed to a high incorporation of oxygen into the film deposited at a high oblique angle. An anisotropic ITO film with a higher oxygen content has a smaller lattice constant, a larger bandgap, a higher resistivity, and a degradation of crystallization. As the flux arrival angle alpha increases, the absorption edge of the spectra demonstrated a blueshift. The blueshift may result from the Burstein-Moss effect due to the increase in the oxygen content in the anisotropic ITO film or to the quantum confinement effect caused by the exciton quantization in the ITO film.
引用
收藏
页码:H471 / H474
页数:4
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