Subthreshold analytical model for dual- material double gate ferroelectric field effect transistor (DMGFeFET)

被引：5

作者：

Mehta, Hema ^{[1
]}

Kaur, Harsupreet ^{[1
]}

机构：

[1] Univ Delhi, Dept Elect Sci, South Campus, New Delhi, India

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2019年 / 34卷 / 06期

关键词：

analytical modeling; dual-material (DM); double gate; ferroelectric (FE); short channel effects; SOI MOSFET; CAPACITANCE; CMOS;

D O I：

10.1088/1361-6641/ab194d

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, an analytical model for dual-material double gate ferroelectric field effect transistor (DMGFeFET) has been developed to investigate the impact of dual-material gate (DMG) and ferroelectric insulator on electrostatic integrity of the device. Landau-Khalatnikov equation along with Poisson's equation has been used to obtain various parameters such as potential profile distribution, threshold voltage roll-off, drain induced barrier lowering, subthreshold slope etc. The results obtained have been comprehensively compared with equivalent dual-material double gate FET (DMGEL,T) and it has been demonstrated that DMGFeFET leads to significant improvement in gate controllability as well as substantial reduction in DIBL values. Furthermore, the proposed device exhibits reduction in subthreshold current by 3 orders as compared to conventional DMGEL,T, thereby implying reduced static power dissipation and efficient device operation. The results obtained using developed model have been validated by numerical simulation results obtained by ATLAS Silvaco tool.

引用

页数：9

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